Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

Gunel Imanova; Ilkhom Bekpulatov

doi:doi:10.11648/j.nano.20210904.11

| Peer-Reviewed

Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba⁺ Ions in Si

Gunel Imanova, Ilkhom Bekpulatov

Published in American Journal of Nano Research and Applications (Volume 9, Issue 4)

Received: 14 February 2022 Accepted: 2 March 2022 Published: 9 March 2022

Views: Downloads:

Download PDF

Share This Article

Twitter
Linked In
Facebook

Abstract

The processes of formation of nanoscale silicide films during the implantation of Ba⁺ ions into Si (111) and Si (100) and subsequent thermal annealing were studied by electron spectroscopy. It is shown that implantation of ions with a high dose D > 10¹⁶ cm^-2 and short-term heating leads to the formation of thin films of barium monosilicide with new surface superstructures. The optimal modes of formation and band-energy parameters of BaSi films obtained by low-energy high-dose implantation of barium ions in Si are determined. It is shown that BaSi films are a narrow-gap semiconductor with a band gap of 0.7 eV and have good emission and thermoelectric properties corresponding to the solar spectrum and have high photoelectric and thermoelectric characteristics. It should be noted that, in addition to the formation of a chemical compound, the narrowing of the Si band gap upon implantation of large doses of Ba⁺ ions also contributes to defects formed as a result of strong disordering of the crystal lattice.

Published in	American Journal of Nano Research and Applications (Volume 9, Issue 4)
DOI	10.11648/j.nano.20210904.11
Page(s)	32-35
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2022. Published by Science Publishing Group

Keywords

Low-Energy High-Dose Ion Implantation, Films of Barium Monosilicide, Optimal Modes of Film Formation, Energy-Band Parameters

References

[1]	Rysbaev А. S., Nasriddinov S. S., Yuldashev Yu. Yu., Djuraev Sh. H., Rahimov A., Shaymanova N., Mirzaeva F. A. Thin silicide films: producing andproperties. 8-th international Conference Solid state physics. Abstracts. Almaty. 2004. pp. 353-354.
[2]	Korol V. M., Kudryavtsev Yu. Ion doping of germanium with sodium. FTP, 2012. 46. 2. pp. 268-273.
[3]	Krivelevich S. A., Makoviychuk M. I., Parmin E. O. Ionic synthesis of silicon structures on an insulator. Current state, new approaches and perspectives. Microelectronics. 1999. 28. 5, pp. 363-370.
[4]	Gritsenko B. P., Kashin O. A. Influence of high-dose ion implantation and acoustic oscillations in the tribosystem on the deformation behavior and wear resistance of steel 45. Bulletin of the Tomsk Polytechnic University. 2004. 307. 4. pp. 121-125.
[5]	Pogrebnjak A., Bratushka S. N., Levintant-Zayonts N. High Dose Ion Implantation into NiTi for Improvement of Pseudoplasticity and Shape Memory Effect. Journal of Nano- and Electronic Physics, 2013, 5 (1). 01016.
[6]	Zhong Y., Bailat C., Averback R. S. Damage accumulation in Si during high- dose self-ion implantation. Journal of Applied Physics, 2004, Vol. 96, № 3. Р. 1328-1335.
[7]	Monch W. Physics of reconstructed silicon surface. Surf. Sci. 1979. v. 86. P. 672-699.
[8]	Rysbaev A. S., Khujaniyozov J. B., Bekpulatov I. R., Rakhimov A. M. Method of additional clearing of the surface of monocrystal Si(111). Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2017, № 9, Р. 92-98.
[9]	Aumidliato A., Nobili D., Ostoja P., Servidore M., Whelan M. J. In Semiconductor silicon. 1977. 638 p.
[10]	Rysbaev A. S. Thin nanoscale silicide films: preparation and properties. Monograph, Tashkent 2013. 144 p.
[11]	Rysbaev A. S., Khuzhaniyazov Zh. B., Bekpulatov I. R., Rakhimov A. M. Formation of Nanosize Silicides Films on the Si(1111) and Si(100) Surfaces by Low-Energy Ion Implantation. Technical Physics, 2014, Vol. 59, No. 10, pp. 1526–1530.
[12]	Rysbaev A. S., Khuzhaniyazov Zh. B., Normuradov M. T., Bekpulatov I. R., Rakhimov A. M. Peculiarities of the Electron Structure of Nanosized Ion_Implanted Layers in Silicon. Technical Physics, 2014, Vol. 59, No. 11, pp. 1705–1710.
[13]	Rysbaev A. S., Rysbaev A. A., Khuzhaniezov Zh. B., Rakhimov A. M. On the formation of new surface superstructures during the formation of thin nanoscale films of silicides. Uzbek Journal of Physics. 2013. 15, 1-2. pp. 26-32.
[14]	Bonch-Bruevich V. L., Kalashnikov S. G. Physics of conductors. M.: Nauka, 1990. 688 p.
[15]	Shteyman E. A., Vdovin V. I., Izotov A. N., Parkhomenko YU. N., Borun A. F. Fotolyuminestsentsiya i strukturnyye defekty sloyev kremniya, implantirovannykh ionami zheleza, Zhurnal Fizika tverdogo tela, 2004. 46, (1), pp. 26-30.
[16]	Maeda Y., Terai Y., Itakura M., Kuwano N., Thin Solid Films. 2004. (461). pp. 160-164.
[17]	Normuradov M. T., Risbaev A. S., Khujaniyozov J. B., Normuradov D. A. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons, Journal of Surface Investigation, 2020. 14, (5), pp. 1066–1071.
[18]	Rysbaev A. S., Normurodov M. T., Rakhimov A. M., Tursunmetova Z. A., Tashatov A. K. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ionn, Journal of Surface Investigation, 2020. 14, No (6), pp. 1168–1173.
[19]	Rysbaev A. S., Tashatov A. K., Dzhuraev S. X., Arzikulov G., Nasriddinov S. S. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon. Journal of Surface Investigation, 2011. 5, (6), pp. 1193–1196.
[20]	Risbaev A. S., Khujaniyazov J. B., Bekpulatov I. R., Rakhimov A. M. Method for additional purification of the surface of Si(111) single crystal, Journal of Surface Investigation, 2017. 11, (5), pp. 994–999.
[21]	Rysbaev A. S., Khujaniyozov J. B., Normuradov M. T., Igamov B. D., Abraeva S. T. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose, Journal of Surface Investigation, 2020. 14, (4), pp. 816–822.
[22]	Rysbaev A. S. Variation of the secondary-emission properties of the surface of single crystals of silicon under conditions of ion implantation and subsequent annealing. Radiotekhnika i Elektronika, 2001. 46, (7), pp. 883–885.

Cite This Article

Plain Text BibTeX RIS

APA Style

Gunel Imanova, Ilkhom Bekpulatov. (2022). Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si. American Journal of Nano Research and Applications, 9(4), 32-35. https://doi.org/10.11648/j.nano.20210904.11

Copy | Download

ACS Style

Gunel Imanova; Ilkhom Bekpulatov. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si. Am. J. Nano Res. Appl. 2022, 9(4), 32-35. doi: 10.11648/j.nano.20210904.11

Copy | Download

AMA Style

Gunel Imanova, Ilkhom Bekpulatov. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si. Am J Nano Res Appl. 2022;9(4):32-35. doi: 10.11648/j.nano.20210904.11

Copy | Download

@article{10.11648/j.nano.20210904.11,
  author = {Gunel Imanova and Ilkhom Bekpulatov},
  title = {Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si},
  journal = {American Journal of Nano Research and Applications},
  volume = {9},
  number = {4},
  pages = {32-35},
  doi = {10.11648/j.nano.20210904.11},
  url = {https://doi.org/10.11648/j.nano.20210904.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20210904.11},
  abstract = {The processes of formation of nanoscale silicide films during the implantation of Ba+ ions into Si (111) and Si (100) and subsequent thermal annealing were studied by electron spectroscopy. It is shown that implantation of ions with a high dose D > 1016 cm-2 and short-term heating leads to the formation of thin films of barium monosilicide with new surface superstructures. The optimal modes of formation and band-energy parameters of BaSi films obtained by low-energy high-dose implantation of barium ions in Si are determined. It is shown that BaSi films are a narrow-gap semiconductor with a band gap of 0.7 eV and have good emission and thermoelectric properties corresponding to the solar spectrum and have high photoelectric and thermoelectric characteristics. It should be noted that, in addition to the formation of a chemical compound, the narrowing of the Si band gap upon implantation of large doses of Ba+ ions also contributes to defects formed as a result of strong disordering of the crystal lattice.},
 year = {2022}
}

Copy | Download

TY  - JOUR
T1  - Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si
AU  - Gunel Imanova
AU  - Ilkhom Bekpulatov
Y1  - 2022/03/09
PY  - 2022
N1  - https://doi.org/10.11648/j.nano.20210904.11
DO  - 10.11648/j.nano.20210904.11
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 32
EP  - 35
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20210904.11
AB  - The processes of formation of nanoscale silicide films during the implantation of Ba+ ions into Si (111) and Si (100) and subsequent thermal annealing were studied by electron spectroscopy. It is shown that implantation of ions with a high dose D > 1016 cm-2 and short-term heating leads to the formation of thin films of barium monosilicide with new surface superstructures. The optimal modes of formation and band-energy parameters of BaSi films obtained by low-energy high-dose implantation of barium ions in Si are determined. It is shown that BaSi films are a narrow-gap semiconductor with a band gap of 0.7 eV and have good emission and thermoelectric properties corresponding to the solar spectrum and have high photoelectric and thermoelectric characteristics. It should be noted that, in addition to the formation of a chemical compound, the narrowing of the Si band gap upon implantation of large doses of Ba+ ions also contributes to defects formed as a result of strong disordering of the crystal lattice.
VL  - 9
IS  - 4
ER  -

Copy | Download

Author Information

Gunel Imanova

Department of Physical, Mathematical and Technical Sciences, Azerbaijan National Academy of Sciences, Institute of Radiation Problems, Baku, Azerbaijan
Ilkhom Bekpulatov

Tashkent State Technical University, Tashkent, Uzbekistan

Download PDF

Sections

Plain Text BibTeX RIS

APA Style

Gunel Imanova, Ilkhom Bekpulatov. (2022). Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si. American Journal of Nano Research and Applications, 9(4), 32-35. https://doi.org/10.11648/j.nano.20210904.11

Copy | Download

ACS Style

Gunel Imanova; Ilkhom Bekpulatov. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si. Am. J. Nano Res. Appl. 2022, 9(4), 32-35. doi: 10.11648/j.nano.20210904.11

Copy | Download

AMA Style

Gunel Imanova, Ilkhom Bekpulatov. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si. Am J Nano Res Appl. 2022;9(4):32-35. doi: 10.11648/j.nano.20210904.11

Copy | Download

@article{10.11648/j.nano.20210904.11,
  author = {Gunel Imanova and Ilkhom Bekpulatov},
  title = {Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si},
  journal = {American Journal of Nano Research and Applications},
  volume = {9},
  number = {4},
  pages = {32-35},
  doi = {10.11648/j.nano.20210904.11},
  url = {https://doi.org/10.11648/j.nano.20210904.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20210904.11},
  abstract = {The processes of formation of nanoscale silicide films during the implantation of Ba+ ions into Si (111) and Si (100) and subsequent thermal annealing were studied by electron spectroscopy. It is shown that implantation of ions with a high dose D > 1016 cm-2 and short-term heating leads to the formation of thin films of barium monosilicide with new surface superstructures. The optimal modes of formation and band-energy parameters of BaSi films obtained by low-energy high-dose implantation of barium ions in Si are determined. It is shown that BaSi films are a narrow-gap semiconductor with a band gap of 0.7 eV and have good emission and thermoelectric properties corresponding to the solar spectrum and have high photoelectric and thermoelectric characteristics. It should be noted that, in addition to the formation of a chemical compound, the narrowing of the Si band gap upon implantation of large doses of Ba+ ions also contributes to defects formed as a result of strong disordering of the crystal lattice.},
 year = {2022}
}

Copy | Download

TY  - JOUR
T1  - Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba+ Ions in Si
AU  - Gunel Imanova
AU  - Ilkhom Bekpulatov
Y1  - 2022/03/09
PY  - 2022
N1  - https://doi.org/10.11648/j.nano.20210904.11
DO  - 10.11648/j.nano.20210904.11
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 32
EP  - 35
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20210904.11
AB  - The processes of formation of nanoscale silicide films during the implantation of Ba+ ions into Si (111) and Si (100) and subsequent thermal annealing were studied by electron spectroscopy. It is shown that implantation of ions with a high dose D > 1016 cm-2 and short-term heating leads to the formation of thin films of barium monosilicide with new surface superstructures. The optimal modes of formation and band-energy parameters of BaSi films obtained by low-energy high-dose implantation of barium ions in Si are determined. It is shown that BaSi films are a narrow-gap semiconductor with a band gap of 0.7 eV and have good emission and thermoelectric properties corresponding to the solar spectrum and have high photoelectric and thermoelectric characteristics. It should be noted that, in addition to the formation of a chemical compound, the narrowing of the Si band gap upon implantation of large doses of Ba+ ions also contributes to defects formed as a result of strong disordering of the crystal lattice.
VL  - 9
IS  - 4
ER  -

Copy | Download