A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena

Mohamed Ali Belaïd; Ahmed Mohammad Nahhas; Momamed Masmoudi

doi:doi:10.11648/j.jeee.20150306.13

| Peer-Reviewed

A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena

Mohamed Ali Belaïd, Ahmed Mohammad Nahhas, Momamed Masmoudi

Published in Journal of Electrical and Electronic Engineering (Volume 3, Issue 6)

Received: 24 August 2015 Accepted: 16 September 2015 Published: 7 December 2015

Views: Downloads:

Download PDF

Share This Article

Twitter
Linked In
Facebook

Abstract

This paper propose a new electro-thermal model nd presents a method of studying the thermal phenomena in power MOSFET transistors, utilizing Advanced Design System techniques by a Symbolic Defined Device (SDD). The model incorporates the thermal effects and the temperature evolution in the device and captures the heat dissipation from the silicon chip to the ambient air by providing three thermal capacitances and three thermal resistances (thermal network). It enables a better estimation of the device’s reliability and lifetime. Furthermore, it can be used to make a connection between the electrical parameter drifts and the existing failures types. The developed model reflects superior performance in terms of accuracy and flexibility and the results obtained indicate a good agreement with the operating conditions.

Published in	Journal of Electrical and Electronic Engineering (Volume 3, Issue 6)
DOI	10.11648/j.jeee.20150306.13
Page(s)	192-197
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2015. Published by Science Publishing Group

Keywords

Modelling, Electro-Thermal, Power MOSFET, Temperature, Self-Heating, Thermal Network

References

[1]	Z. Radivojevic, K. Andresson, J. A. Bielen, P. J. van der Wel, J. Rantala, “Operating limits for power amplifiers at high junction temperatures,” Microelectronics Reliability. 44 (2004) 963-972.
[2]	Juraj Marek, Ales Chvála, Daniel Donoval, Patrik Príbytný, Marián Molnár, Miroslav Mikolášek, “Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations,” Solid-State Electronics 2014, Volume 94, pp. 44–50.
[3]	M. Riccioa, A. Castellazzib, G. De Falcoa, A. Irace, “Experimental analysis of electro-thermal instability in SiC Power MOSFETs,” Microelectronics Reliability 2013, volume 53, pp. 1739–1744.
[4]	C. Kun-Ming, H. Guo-Wei, W. Sheng-Chun, Y. Wen-Kuan, F. Yean-Kuen, Y. Fu-Liang, Characterization and modelling of SOI varactors at various temperatures, IEEE Trans. Electron Devices. 51 (3) (2004) 415-420.
[5]	M.N. Sabry, W. Fikry, K. Abdel Salam, M. M. Awad and A. E. Nasser, A lumped transient thermal model for self-heating in MOSFETs, Microelectronics Journal. 32 (2001) 847-853.
[6]	M. Miller, T. Dinh, E. Shumate, “A new empirical large signal model for silicon RF LDMOSFET’s,” IEEE MTT-S Technol. Wireless Applicat. Dig. (1997) 19-22.
[7]	I. Angelov, N. Rorsman, J. Stenarson, M. Garcia, H. Zirath, “An empirical table-based model,” IEEE Trans. Microwave Theory Tech. 47 (1999) 2350-2357.
[8]	Y. Yang, Y.Y. Woo, J. Yi, B. Kim, “A new empirical Large-Signal model of Si LDMOSFETs for High-power amplifier design,” IEEE Trans. Microwave Theory Tech, 49 (9) (2001) 1626-1633.
[9]	Motorola on line, “Motorola’s Electro Thermal (MET) LDMOS Model MosnldMet”, 2003.
[10]	M. A. Belaïd, H. Maanane, K. Mourgues, M. Masmoudi, K. Ketata, et J. Marcon, “Characterization and Modelling of Power RF LDMOS Transistor Including Self-Heating Effects,” 16th Int. Conf. Microelectronics (IEEE), Tunis, Tunisie (2004), 262-265.
[11]	Y. Yang, Y. Y. Woo, J. Yi, B. Kim, “A New Empirical Large-Signal Model of Si LDMOSFETs for High-Power Amplifier Design,” IEEE Trans. Microwave Theory Tech., vol. 49, pp. 1626-33, Sep. 2001.
[12]	D. Moncoqut, “Propriétés physiques et modélisation du transistor de puissance LDMOS,” Thèse de doctorat, Université Paul Sabatier de Toulouse, Octobre 1997.
[13]	P. Aloïsi, “Les semiconducteurs de puissance de la physique du solide aux applications,” Ellipses édition marketing S.A., 2001.
[14]	M. A. Belaïd, K. Ketata, K. Mourgues, H. Maanane, M. Masmoudi, J. Marcon, “Comparative analysis of accelerated ageing effects on power RF LDMOS reliability,” Microelectronics Reliability, vol. 45, pp. 1732–1737, 2005.
[15]	M. A. Belaïd, “Contribution à l'analyse des dégradations d'origine thermique et des interactions électrothermiques dans les dispositifs LDMOS RF de puissance,” Thèse de doctorat, Université de Rouen, décembre 2006.
[16]	B.J. Baliga, Modern Power Devices, General Electric Company Schenectady, John Wiley & Sons, 1987.
[17]	M.A. Belaïd et al, “Analysis and Simulation of Self-Heating Effects on RF LDMOS Devices”, in Proc. SISPAD (IEEE), Tokyo, 2005.
[18]	H. A. Jayatissa, L. Zhiyu, Effect of temperature on capacitance-voltage characteristics of SOI, Materials Science and Engineering B, (2005) 331-334.
[19]	M. Tlig et al, Conducted and radiated EMI evolution of power RF N-LDMOS after accelerated ageing tests, Microelectronics Reliability, 2013, pp. 1793–97.
[20]	M.A. Belaı¨d *, K. Ketata, M. Gares, J. Marcon, K. Mourgues, M. Masmoudi, 2-D simulation and analysis of temperature effects on electrical parameters degradation of power RF LDMOS device, Nuclear Instruments and Methods in Physics Research B, 2006, pp. 250–25.

Cite This Article

Plain Text BibTeX RIS

APA Style

Mohamed Ali Belaïd, Ahmed Mohammad Nahhas, Momamed Masmoudi. (2015). A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena. Journal of Electrical and Electronic Engineering, 3(6), 192-197. https://doi.org/10.11648/j.jeee.20150306.13

Copy | Download

ACS Style

Mohamed Ali Belaïd; Ahmed Mohammad Nahhas; Momamed Masmoudi. A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena. J. Electr. Electron. Eng. 2015, 3(6), 192-197. doi: 10.11648/j.jeee.20150306.13

Copy | Download

AMA Style

Mohamed Ali Belaïd, Ahmed Mohammad Nahhas, Momamed Masmoudi. A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena. J Electr Electron Eng. 2015;3(6):192-197. doi: 10.11648/j.jeee.20150306.13

Copy | Download

@article{10.11648/j.jeee.20150306.13,
  author = {Mohamed Ali Belaïd and Ahmed Mohammad Nahhas and Momamed Masmoudi},
  title = {A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {3},
  number = {6},
  pages = {192-197},
  doi = {10.11648/j.jeee.20150306.13},
  url = {https://doi.org/10.11648/j.jeee.20150306.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20150306.13},
  abstract = {This paper propose a new electro-thermal model nd presents a method of studying the thermal phenomena in power MOSFET transistors, utilizing Advanced Design System techniques by a Symbolic Defined Device (SDD). The model incorporates the thermal effects and the temperature evolution in the device and captures the heat dissipation from the silicon chip to the ambient air by providing three thermal capacitances and three thermal resistances (thermal network). It enables a better estimation of the device’s reliability and lifetime. Furthermore, it can be used to make a connection between the electrical parameter drifts and the existing failures types. The developed model reflects superior performance in terms of accuracy and flexibility and the results obtained indicate a good agreement with the operating conditions.},
 year = {2015}
}

Copy | Download

TY  - JOUR
T1  - A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena
AU  - Mohamed Ali Belaïd
AU  - Ahmed Mohammad Nahhas
AU  - Momamed Masmoudi
Y1  - 2015/12/07
PY  - 2015
N1  - https://doi.org/10.11648/j.jeee.20150306.13
DO  - 10.11648/j.jeee.20150306.13
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 192
EP  - 197
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20150306.13
AB  - This paper propose a new electro-thermal model nd presents a method of studying the thermal phenomena in power MOSFET transistors, utilizing Advanced Design System techniques by a Symbolic Defined Device (SDD). The model incorporates the thermal effects and the temperature evolution in the device and captures the heat dissipation from the silicon chip to the ambient air by providing three thermal capacitances and three thermal resistances (thermal network). It enables a better estimation of the device’s reliability and lifetime. Furthermore, it can be used to make a connection between the electrical parameter drifts and the existing failures types. The developed model reflects superior performance in terms of accuracy and flexibility and the results obtained indicate a good agreement with the operating conditions.
VL  - 3
IS  - 6
ER  -

Copy | Download

Author Information

Mohamed Ali Belaïd
Ahmed Mohammad Nahhas

ECED, CEL, Umm-Al-Qura University, Makkah, Saudi Arabia
Momamed Masmoudi

GPM-UMR CNRS, University of Rouen, Saint Etienne du Rouvray, France

Download PDF

Sections

Plain Text BibTeX RIS

APA Style

Mohamed Ali Belaïd, Ahmed Mohammad Nahhas, Momamed Masmoudi. (2015). A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena. Journal of Electrical and Electronic Engineering, 3(6), 192-197. https://doi.org/10.11648/j.jeee.20150306.13

Copy | Download

ACS Style

Mohamed Ali Belaïd; Ahmed Mohammad Nahhas; Momamed Masmoudi. A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena. J. Electr. Electron. Eng. 2015, 3(6), 192-197. doi: 10.11648/j.jeee.20150306.13

Copy | Download

AMA Style

Mohamed Ali Belaïd, Ahmed Mohammad Nahhas, Momamed Masmoudi. A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena. J Electr Electron Eng. 2015;3(6):192-197. doi: 10.11648/j.jeee.20150306.13

Copy | Download

@article{10.11648/j.jeee.20150306.13,
  author = {Mohamed Ali Belaïd and Ahmed Mohammad Nahhas and Momamed Masmoudi},
  title = {A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {3},
  number = {6},
  pages = {192-197},
  doi = {10.11648/j.jeee.20150306.13},
  url = {https://doi.org/10.11648/j.jeee.20150306.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20150306.13},
  abstract = {This paper propose a new electro-thermal model nd presents a method of studying the thermal phenomena in power MOSFET transistors, utilizing Advanced Design System techniques by a Symbolic Defined Device (SDD). The model incorporates the thermal effects and the temperature evolution in the device and captures the heat dissipation from the silicon chip to the ambient air by providing three thermal capacitances and three thermal resistances (thermal network). It enables a better estimation of the device’s reliability and lifetime. Furthermore, it can be used to make a connection between the electrical parameter drifts and the existing failures types. The developed model reflects superior performance in terms of accuracy and flexibility and the results obtained indicate a good agreement with the operating conditions.},
 year = {2015}
}

Copy | Download

TY  - JOUR
T1  - A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena
AU  - Mohamed Ali Belaïd
AU  - Ahmed Mohammad Nahhas
AU  - Momamed Masmoudi
Y1  - 2015/12/07
PY  - 2015
N1  - https://doi.org/10.11648/j.jeee.20150306.13
DO  - 10.11648/j.jeee.20150306.13
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 192
EP  - 197
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20150306.13
AB  - This paper propose a new electro-thermal model nd presents a method of studying the thermal phenomena in power MOSFET transistors, utilizing Advanced Design System techniques by a Symbolic Defined Device (SDD). The model incorporates the thermal effects and the temperature evolution in the device and captures the heat dissipation from the silicon chip to the ambient air by providing three thermal capacitances and three thermal resistances (thermal network). It enables a better estimation of the device’s reliability and lifetime. Furthermore, it can be used to make a connection between the electrical parameter drifts and the existing failures types. The developed model reflects superior performance in terms of accuracy and flexibility and the results obtained indicate a good agreement with the operating conditions.
VL  - 3
IS  - 6
ER  -

Copy | Download