A porous silicon based sensor has been developed to detect anions in a salt solution by the application of DC pulses on a Semiconductor/Electrolyte system. The sensor performance can be explained invoking a model where charge accumulation in the semiconductor surface states directly affects their geometric capacitances. By varying anions concentrations in salt solution, the results show a fairly constant value of substrate resistance, whereas variations in those geometric capacitances depend on the anion concentration. The constancy of substrate resistance and variability of geometric capacitance constitute key points for the development of an anion solution sensor.
| Published in | International Journal of Materials Science and Applications (Volume 3, Issue 5) |
| DOI | 10.11648/j.ijmsa.20140305.20 |
| Page(s) | 200-204 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2014. Published by Science Publishing Group |
Porous Silicon, Chemical Sensors, Surface States
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APA Style
Arturo Ramirez-Porras, Natalia Murillo-Quiros. (2014). Transient Response in Aqueous Solution of an Anions Porous Silicon Based Sensor. International Journal of Materials Science and Applications, 3(5), 200-204. https://doi.org/10.11648/j.ijmsa.20140305.20
ACS Style
Arturo Ramirez-Porras; Natalia Murillo-Quiros. Transient Response in Aqueous Solution of an Anions Porous Silicon Based Sensor. Int. J. Mater. Sci. Appl. 2014, 3(5), 200-204. doi: 10.11648/j.ijmsa.20140305.20
AMA Style
Arturo Ramirez-Porras, Natalia Murillo-Quiros. Transient Response in Aqueous Solution of an Anions Porous Silicon Based Sensor. Int J Mater Sci Appl. 2014;3(5):200-204. doi: 10.11648/j.ijmsa.20140305.20
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Download@article{10.11648/j.ijmsa.20140305.20,
author = {Arturo Ramirez-Porras and Natalia Murillo-Quiros},
title = {Transient Response in Aqueous Solution of an Anions Porous Silicon Based Sensor},
journal = {International Journal of Materials Science and Applications},
volume = {3},
number = {5},
pages = {200-204},
doi = {10.11648/j.ijmsa.20140305.20},
url = {https://doi.org/10.11648/j.ijmsa.20140305.20},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140305.20},
abstract = {A porous silicon based sensor has been developed to detect anions in a salt solution by the application of DC pulses on a Semiconductor/Electrolyte system. The sensor performance can be explained invoking a model where charge accumulation in the semiconductor surface states directly affects their geometric capacitances. By varying anions concentrations in salt solution, the results show a fairly constant value of substrate resistance, whereas variations in those geometric capacitances depend on the anion concentration. The constancy of substrate resistance and variability of geometric capacitance constitute key points for the development of an anion solution sensor.},
year = {2014}
}
TY - JOUR T1 - Transient Response in Aqueous Solution of an Anions Porous Silicon Based Sensor AU - Arturo Ramirez-Porras AU - Natalia Murillo-Quiros Y1 - 2014/09/30 PY - 2014 N1 - https://doi.org/10.11648/j.ijmsa.20140305.20 DO - 10.11648/j.ijmsa.20140305.20 T2 - International Journal of Materials Science and Applications JF - International Journal of Materials Science and Applications JO - International Journal of Materials Science and Applications SP - 200 EP - 204 PB - Science Publishing Group SN - 2327-2643 UR - https://doi.org/10.11648/j.ijmsa.20140305.20 AB - A porous silicon based sensor has been developed to detect anions in a salt solution by the application of DC pulses on a Semiconductor/Electrolyte system. The sensor performance can be explained invoking a model where charge accumulation in the semiconductor surface states directly affects their geometric capacitances. By varying anions concentrations in salt solution, the results show a fairly constant value of substrate resistance, whereas variations in those geometric capacitances depend on the anion concentration. The constancy of substrate resistance and variability of geometric capacitance constitute key points for the development of an anion solution sensor. VL - 3 IS - 5 ER -
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