Silicon nanoparticles/nanostructures have been prepared by different methods. Lasers of different operational modes have been employed to prepare silicon nanoparticles by laser-induced etching, laser ablation and laser annealing. Moreover, electrochemical and photoelectrochemical etching were performed to synthesize silicon nanostructures. Optimum etching rate of 2.4 µm/min is obtained for the porous layer prepared by electrochemical etching under optimum conditions of 15 mA/cm2 and 10 minutes etching current density and etching time, respectively. Characterization of the prepared silicon nanostructures / nanoparticles was carried out using various methods. The experimentally observed Raman spectra of nanostructured layers prepared by three etching techniques reveal a red shift to 518 cm-1 and line broadening of 12 cm-1. While fitting of these spectra with the quantum confinement model provide an average size for nanostructured layers 6, 5.5 and 2 nm for photochemical, electrochemical and phooelectrochemical etching, respectively. The surface morphology investigation and their analysis provide valuable details on silicon nanostructure/nanoparticle size and size distribution.
| Published in | Advances in Materials (Volume 2, Issue 1) |
| DOI | 10.11648/j.am.20130201.12 |
| Page(s) | 6-11 |
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
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Laser Ablation, Laser Annealing, Silicon Nanostructures
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APA Style
Bassam G. Rasheed. (2013). Synthesis of Silicon Nanostructures: Comparative Study. Advances in Materials, 2(1), 6-11. https://doi.org/10.11648/j.am.20130201.12
ACS Style
Bassam G. Rasheed. Synthesis of Silicon Nanostructures: Comparative Study. Adv. Mater. 2013, 2(1), 6-11. doi: 10.11648/j.am.20130201.12
AMA Style
Bassam G. Rasheed. Synthesis of Silicon Nanostructures: Comparative Study. Adv Mater. 2013;2(1):6-11. doi: 10.11648/j.am.20130201.12
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Download@article{10.11648/j.am.20130201.12,
author = {Bassam G. Rasheed},
title = {Synthesis of Silicon Nanostructures: Comparative Study},
journal = {Advances in Materials},
volume = {2},
number = {1},
pages = {6-11},
doi = {10.11648/j.am.20130201.12},
url = {https://doi.org/10.11648/j.am.20130201.12},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.am.20130201.12},
abstract = {Silicon nanoparticles/nanostructures have been prepared by different methods. Lasers of different operational modes have been employed to prepare silicon nanoparticles by laser-induced etching, laser ablation and laser annealing. Moreover, electrochemical and photoelectrochemical etching were performed to synthesize silicon nanostructures. Optimum etching rate of 2.4 µm/min is obtained for the porous layer prepared by electrochemical etching under optimum conditions of 15 mA/cm2 and 10 minutes etching current density and etching time, respectively. Characterization of the prepared silicon nanostructures / nanoparticles was carried out using various methods. The experimentally observed Raman spectra of nanostructured layers prepared by three etching techniques reveal a red shift to 518 cm-1 and line broadening of 12 cm-1. While fitting of these spectra with the quantum confinement model provide an average size for nanostructured layers 6, 5.5 and 2 nm for photochemical, electrochemical and phooelectrochemical etching, respectively. The surface morphology investigation and their analysis provide valuable details on silicon nanostructure/nanoparticle size and size distribution.},
year = {2013}
}
TY - JOUR T1 - Synthesis of Silicon Nanostructures: Comparative Study AU - Bassam G. Rasheed Y1 - 2013/02/20 PY - 2013 N1 - https://doi.org/10.11648/j.am.20130201.12 DO - 10.11648/j.am.20130201.12 T2 - Advances in Materials JF - Advances in Materials JO - Advances in Materials SP - 6 EP - 11 PB - Science Publishing Group SN - 2327-252X UR - https://doi.org/10.11648/j.am.20130201.12 AB - Silicon nanoparticles/nanostructures have been prepared by different methods. Lasers of different operational modes have been employed to prepare silicon nanoparticles by laser-induced etching, laser ablation and laser annealing. Moreover, electrochemical and photoelectrochemical etching were performed to synthesize silicon nanostructures. Optimum etching rate of 2.4 µm/min is obtained for the porous layer prepared by electrochemical etching under optimum conditions of 15 mA/cm2 and 10 minutes etching current density and etching time, respectively. Characterization of the prepared silicon nanostructures / nanoparticles was carried out using various methods. The experimentally observed Raman spectra of nanostructured layers prepared by three etching techniques reveal a red shift to 518 cm-1 and line broadening of 12 cm-1. While fitting of these spectra with the quantum confinement model provide an average size for nanostructured layers 6, 5.5 and 2 nm for photochemical, electrochemical and phooelectrochemical etching, respectively. The surface morphology investigation and their analysis provide valuable details on silicon nanostructure/nanoparticle size and size distribution. VL - 2 IS - 1 ER -
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